PART |
Description |
Maker |
LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
BSS84LT1 BSS84LT1G BSS84L |
Power MOSFET 130 mAmps, 50 Volts Power MOSFET 130 mA, 50 V
|
ONSEMI[ON Semiconductor]
|
BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
NTES1P02 NTES1P02-D |
P?Channel Power MOSFET Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管) Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
BSS138LT1 |
N-CHANNEL POWER MOSFET Power MOSFET 200 mAmps, 50 Volts
|
WILLAS ELECTRONIC CORP
|
LBSS138LT1G LBSS138LT1 |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
LRC[Leshan Radio Company]
|
LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
MGSF1N02LT1 MGSF1N02LT3 |
Power MOSFET 750 mAmps, 20 Volts N?Channel SOT?3
|
TY Semiconductor Co., Ltd
|
MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp. Integrated Device Technology, Inc. IRF[International Rectifier]
|